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Dynamic multifunctional all-chalcogenide metasurface filter with ultra-multiple cycles

Dynamically tunable metasurfaces employing chalcogenide phase-change materials (PCMs) such as Ge2Sb2Te5 alloys have garnered significant attention and research efforts. However, the utilization of chalcogenide PCMs in dynamic metasurface devices necessitates protection, owing to their susceptibility...

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Bibliographic Details
Published in:Advanced Photonics Nexus 2024-09, Vol.3 (5), p.056012-056012
Main Authors: Zhang, Mingjie, Wen, Zhanbo, Huang, Zhenqi, Chen, Yuanzhi, Lin, Minsi, Shen, Yue, Li, Yan, Yao, Shunyu, Li, Zhen, Chen, Zhenqiang, Li, Zhaohui
Format: Article
Language:English
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Summary:Dynamically tunable metasurfaces employing chalcogenide phase-change materials (PCMs) such as Ge2Sb2Te5 alloys have garnered significant attention and research efforts. However, the utilization of chalcogenide PCMs in dynamic metasurface devices necessitates protection, owing to their susceptibility to volatilization and oxidation. Conventional protective layer materials such as Al2O3, TiO2, and SiO2 present potential drawbacks including diffusion, oxidation, or thermal expansion coefficient mismatch with chalcogenide PCMs during high-temperature phase transition, severely limiting the durability of chalcogenide PCM-based devices. In this paper, we propose, for the first time to our knowledge, the utilization of chalcogenide glass characterized by high thermal stability as a protective material for chalcogenide PCM. This approach addresses the durability challenge of current dynamic photonic devices based on chalcogenide PCM by virtue of their closely matched optical and thermal properties. Building upon this innovation, we introduce an all-chalcogenide dynamic tunable metasurface filter and comprehensively simulate and analyze its characteristics. This pioneering work paves the way for the design and practical implementation of optically dynamically tunable metasurface devices leveraging chalcogenide PCMs, ushering in new opportunities in the field.
ISSN:2791-1519
2791-1519
DOI:10.1117/1.APN.3.5.056012