Near-infrared (1 to 4  μm) control of plasmonic resonance wavelength in Ga-doped ZnO

The plasmonic resonance wavelength λres in ZnO doped with 3 wt.% Ga2O3 can be controlled over the range 1 to 4  μm by simple furnace annealing in flowing Ar. For each annealing temperature TA, the reflectance Rm and transmittance Tm are measured over a wavelength range, λ=185 to 3200 nm, (energy ran...

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Bibliographic Details
Published in:Optical engineering 2017-05, Vol.56 (5), p.057109-057109
Main Authors: Look, David C, Leedy, Kevin D, Grzybowski, Gordon J, Claflin, Bruce B
Format: Article
Language:English
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Summary:The plasmonic resonance wavelength λres in ZnO doped with 3 wt.% Ga2O3 can be controlled over the range 1 to 4  μm by simple furnace annealing in flowing Ar. For each annealing temperature TA, the reflectance Rm and transmittance Tm are measured over a wavelength range, λ=185 to 3200 nm, (energy range, E=6.7 to 0.387 eV), and the reflectance coefficient R is calculated from Rm and Tm. The value of λres is then determined from a Drude-theory analysis of R versus E that yields fitting parameters nopt (optical carrier concentration), μopt (optical mobility), high-frequency dielectric constant ϵ∞, and thickness d at each annealing temperature TA. The validity of this process is confirmed by comparison of ϵ∞ with literature values and comparison of nopt and μopt with analogous quantities n and μH measured by the Hall effect.
ISSN:0091-3286
1560-2303
DOI:10.1117/1.OE.56.5.057109