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Silicon and phosphorus co-implantation into undoped and indium-doped GaAs substrates
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Published in: | Semiconductors (Woodbury, N.Y.) N.Y.), 1997-12, Vol.31 (12), p.1217-1220 |
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Language: | English |
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cites | cdi_FETCH-LOGICAL-c227t-d8bbb542f628c04d608de884a831ef480386389a10f9b021841dbc6156c34fc73 |
container_end_page | 1220 |
container_issue | 12 |
container_start_page | 1217 |
container_title | Semiconductors (Woodbury, N.Y.) |
container_volume | 31 |
creator | Dymova, N. N. Kunitsyn, A. E. Chaldyshev, V. V. Markov, A. V. |
description | |
doi_str_mv | 10.1134/1.1187296 |
format | article |
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issn | 1063-7826 1090-6479 |
language | eng |
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source | Springer Link |
title | Silicon and phosphorus co-implantation into undoped and indium-doped GaAs substrates |
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