High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 1998-01, Vol.32 (1), p.19-25
Main Authors: Faleev, N. N., Chaldyshev, V. V., Kunitsyn, A. E., Tret’yakov, V. V., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.
Format: Article
Language:English
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ISSN:1063-7826
1090-6479
DOI:10.1134/1.1187352