Weak-field magnetoresistance of two-dimensional electrons in In0.53Ga0.47As/InP heterostructures in the persistent photoconductivity regime

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 1998-09, Vol.32 (9), p.985-991
Main Authors: Bykanov, D. D., Kreshchuk, A. M., Novikov, S. V., Polyanskaya, T. A., Savel’ev, I. G.
Format: Article
Language:English
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ISSN:1063-7826
1090-6479
DOI:10.1134/1.1187530