Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 1999-08, Vol.33 (8), p.824-829
Main Authors: Vilisova, M. D., Ivonin, I. V., Lavrentieva, L. G., Subach, S. V., Yakubenya, M. P., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R., Bert, N. A., Musikhin, Yu. G., Chaldyshev, V. V.
Format: Article
Language:English
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ISSN:1063-7826
1090-6479
DOI:10.1134/1.1187790