High-temperature high-dose implantation of N+ and Al+ ions in 6H-SiC

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Bibliographic Details
Published in:Technical physics letters 1997-08, Vol.23 (8), p.617-620
Main Authors: Yankov, R. A., Voelskow, M., Kreissig, W., Kulikov, D. V., Pezoldt, J., Skorupa, W., Trushin, Yu. V., Kharlamov, V. S., Tsigankov, D. N.
Format: Article
Language:English
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ISSN:1063-7850
1090-6533
DOI:10.1134/1.1261883