Extremal character of the change in the reverse current of silicon p +-n structures during the formation of nickel Ohmic contacts

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Bibliographic Details
Published in:Technical physics letters 1998-06, Vol.24 (6), p.455-456
Main Authors: Bogach, N. V., Litvinenko, V. N., Maronchuk, I. E.
Format: Article
Language:English
Online Access:Get full text
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ISSN:1063-7850
1090-6533
DOI:10.1134/1.1262144