Excess tunneling currents in p-Si-n-3C-SiC heterostructures

Saved in:
Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2001-01, Vol.35 (1), p.77-79
Main Authors: Karazhanov, S. Zh, Atabaev, I. G., Saliev, T. M., Kanaki, É. V., Dzhaksimov, E.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:
ISSN:1063-7826
1090-6479
DOI:10.1134/1.1340293