Effect of structural imperfection on the spectrum of deep levels in 6H-SiC

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2001-12, Vol.35 (12), p.1372-1374
Main Authors: Lebedev, A. A., Davydov, D. V., Tregubova, A. S., Bogdanova, E. V., Shcheglov, M. P., Pavlenko, M. V.
Format: Article
Language:English
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ISSN:1063-7826
1090-6479
DOI:10.1134/1.1427973