Titanium, vanadium, and nickel impurities in 3C-SiC: Electronic structure and lattice relaxation effects

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2002-07, Vol.36 (7), p.751-754
Main Authors: Medvedeva, N. I., Yuryeva, É. I., Ivanovskii, A. L.
Format: Article
Language:English
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ISSN:1063-7826
1090-6479
DOI:10.1134/1.1493743