Modeling the effect of the transconductance increase in GaAs field-effect transistors

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Bibliographic Details
Published in:Doklady. a journal of the Russian Academy of Sciences. Physics 2002-10, Vol.47 (10), p.715-716
Main Authors: Gergel’, V. A., Mokerov, V. G., Zelenyi, A. P., Timofeev, M. V.
Format: Article
Language:English
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ISSN:1028-3358
1562-6903
DOI:10.1134/1.1519312