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Room-temperature photoluminescence at 1.55 μm from heterostructures with InAs/InGaAsN quantum dots on GaAs substrates
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Published in: | Technical physics letters 2002-11, Vol.28 (11), p.964-966 |
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container_end_page | 966 |
container_issue | 11 |
container_start_page | 964 |
container_title | Technical physics letters |
container_volume | 28 |
creator | Odnoblyudov, V. A. Egorov, A. Yu Kryzhanovskaya, N. V. Gladyshev, A. G. Mamutin, V. V. Tsatsul’nikov, A. F. Ustinov, V. M. |
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doi_str_mv | 10.1134/1.1526898 |
format | article |
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title | Room-temperature photoluminescence at 1.55 μm from heterostructures with InAs/InGaAsN quantum dots on GaAs substrates |
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