The role of tin in reactions involving carbon interstitial atoms in irradiated silicon

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2003-03, Vol.37 (3), p.288-293
Main Authors: Khirunenko, L. I., Kobzar’, O. A., Pomozov, Yu. V., Sosnin, M. G., Tripachko, N. A.
Format: Article
Language:English
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ISSN:1063-7826
1090-6479
DOI:10.1134/1.1561520