Hydrogen-induced splitting in silicon over a buried layer heavily doped with boron

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2003-06, Vol.37 (6), p.620-624
Main Authors: Kilanov, D. V., Popov, V. P., Safronov, L. N., Nikiforov, A. I., Sholz, R.
Format: Article
Language:English
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ISSN:1063-7826
1090-6479
DOI:10.1134/1.1582524