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Mid-infrared (λ=2.775 µm) injection laser based on AlGaAsSb/InAs/CdMgSe hybrid double heterostructure grown by molecular-beam epitaxy

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2003-06, Vol.37 (6), p.736-739
Main Authors: Ivanov, S. V., Moiseev, K. D., Kaigorodov, V. A., Solov’ev, V. A., Sorokin, S. V., Meltser, B. Ya, Grebenshchikova, E. A., Sedova, I. V., Terent’ev, Ya. V., Semenov, A. N., Astakhova, A. P., Mikhailova, M. P., Toropov, A. A., Yakovlev, Yu. P., Kop’ev, P. S., Alferov, Zh. I.
Format: Article
Language:English
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ISSN:1063-7826
1090-6479
DOI:10.1134/1.1582546