Role of Si-doped Al0.3Ga0.7As layers in the high-frequency conductivity of GaAs/Al0.3Ga0.7As heterostructures under conditions of the quantum hall effect

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2004-06, Vol.38 (6), p.702-711
Main Authors: Drichko, I. L., D’yakonov, A. M., Smirnov, I. Yu, Gal’perin, Yu. M., Preobrazhenskii, V. V., Toropov, A. I.
Format: Article
Language:English
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ISSN:1063-7826
1090-6479
DOI:10.1134/1.1766376