The resonant tunneling of holes through double-barrier structures with InAs QDs at the center of a GaAs quantum well

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2005-01, Vol.39 (5), p.543-546
Main Authors: Morozova, E. N., Makarovskii, O. N., Volkov, V. A., Dubrovskii, Yu. V., Turyanska, L., Vdovin, E. E., Patané, A., Eaves, L., Henini, M.
Format: Article
Language:English
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ISSN:1063-7826
1090-6479
DOI:10.1134/1.1923562