The resonant tunneling of holes through double-barrier structures with InAs QDs at the center of a GaAs quantum well

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Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2005-01, Vol.39 (5), p.543-546
Main Authors: Morozova, E. N., Makarovskii, O. N., Volkov, V. A., Dubrovskii, Yu. V., Turyanska, L., Vdovin, E. E., Patané, A., Eaves, L., Henini, M.
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container_title Semiconductors (Woodbury, N.Y.)
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creator Morozova, E. N.
Makarovskii, O. N.
Volkov, V. A.
Dubrovskii, Yu. V.
Turyanska, L.
Vdovin, E. E.
Patané, A.
Eaves, L.
Henini, M.
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doi_str_mv 10.1134/1.1923562
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title The resonant tunneling of holes through double-barrier structures with InAs QDs at the center of a GaAs quantum well
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