EPR identification of the triplet ground state and photoinduced population inversion for a Si-C divacancy in silicon carbide

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Bibliographic Details
Published in:JETP letters 2005-10, Vol.82 (7), p.441-443
Main Authors: Baranov, P. G., Il’in, I. V., Mokhov, E. N., Muzafarova, M. V., Orlinskii, S. B., Schmidt, J.
Format: Article
Language:English
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ISSN:0021-3640
1090-6487
DOI:10.1134/1.2142873