Low-temperature motion of dislocations as a possible mechanism of formation of one-dimensional electronic structures in semiconductor crystals

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Bibliographic Details
Published in:JETP letters 1997-11, Vol.66 (10), p.675-680
Main Authors: Tarbaev, N. I., Shepel’skii, G. A., Sal’kov, E. A.
Format: Article
Language:English
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ISSN:0021-3640
1090-6487
DOI:10.1134/1.567578