Carrier trapping and delocalization in PbI2-containing CdI2 crystals

Two pairs of electron and hole traps have been identified in PbI 2 -containing CdI 2 crystals in the range 80–305 K using a combination of thermally stimulated and photoinduced depolarization of a photoelectret state. The electron traps are identified as Pb + centers in nanocrystalline 2 H - and 4 H...

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Bibliographic Details
Published in:Inorganic materials 2012-04, Vol.48 (4), p.423-427
Main Authors: Gal’chinskii, A. V., Gloskovskaya, N. V., Yaritskaya, L. I.
Format: Article
Language:English
Subjects:
Chemistry
Chemistry and Materials Science
Industrial Chemistry/Chemical Engineering
Inorganic Chemistry
Materials Science
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Summary:Two pairs of electron and hole traps have been identified in PbI 2 -containing CdI 2 crystals in the range 80–305 K using a combination of thermally stimulated and photoinduced depolarization of a photoelectret state. The electron traps are identified as Pb + centers in nanocrystalline 2 H - and 4 H -PbI 2 inclusions in the CdI 2 lattice. One of the hole centers is assumed to be a Pb 2+ vacancy. All of the traps in the binary crystalline system are related to the presence of PbI 2 impurities as a consequence of the formation of heterojunctions between the CdI 2 matrix and nanocrystalline PbI 2 inclusions. We have calculated the energy distribution for filled traps.
ISSN:0020-1685
1608-3172
DOI:10.1134/S0020168512040024