An apparatus for pulse chemical vapor deposition of layers

An apparatus for chemical deposition of layers of different materials with pulsed automated dosing of a hot gas phase of volatile metal-organic compounds (precursors) admitted into a reaction chamber is described. The apparatus has three channels for dosing the gas precursor phase and three channels...

Full description

Saved in:
Bibliographic Details
Published in:Instruments and experimental techniques (New York) 2013-05, Vol.56 (3), p.353-357
Main Authors: Shevtsov, Yu. V., Kuchumov, B. M., Semenov, A. R., Igumenov, I. K.
Format: Article
Language:English
Subjects:
Electrical Engineering
Laboratory Techniques
Measurement Science and Instrumentation
Physical Chemistry
Physics
Physics and Astronomy
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:An apparatus for chemical deposition of layers of different materials with pulsed automated dosing of a hot gas phase of volatile metal-organic compounds (precursors) admitted into a reaction chamber is described. The apparatus has three channels for dosing the gas precursor phase and three channels for dosing reacting gases. As an example, a technique for depositing HfO 2 films on a (100)Si substrate is presented, and the deposited films are analyzed. It is shown, that this apparatus can be used to deposit layers on complex 3D systems with a large aspect ratio using an example of the deposition of HfO 2 layers on the inner surfaces of channels of a microchannel plate.
ISSN:0020-4412
1608-3180
DOI:10.1134/S002044121303010X