Anomalous Hall effect in highly Mn-Doped silicon films

• Published in: JETP letters 2009-08, Vol.89 (12), p.603-608
• Main Authors: Nikolaev, S. N., Aronzon, B. A., Ryl’kov, V. V., Tugushev, V. V., Demidov, E. S., Levchuk, S. A., Lesnikov, V. P., Podol’skii, V. V., Gareev, R. R.
• Format: Article
• Language: English
• Subjects: Atomic; Biological and Medical Physics; Biophysics; Molecular; Optical and Plasma Physics; Particle and Nuclear Physics; Physics; Physics and Astronomy; Quantum Information Technology; Solid State Physics; Spintronics
• ISSN: 0021-3640; 1090-6487
• DOI: 10.1134/S0021364009120030

The transport and magnetic properties of Mn x Si 1 − x films with a high ( x ≈ 0.35) content of Mn produced by laser deposition at growth temperatures of 300–350°C have been studied in a temperature range of 5–300 K in magnetic fields of up to 2.5 T. The films exhibit a hole-type metallic conductivity and a relatively weak change of magnetization in a temperature range of 50–200 K. An anomalous Hall effect with an essentially hysteretic behavior from 50 K up to ≈230 K has been discovered. The properties of the films are explained by the two-phase model, in which ferromagnetic clusters containing interstitial Mn ions with a localized magnetic moment are embedded in the matrix of a weak band MnSi 2 − x ( x ≈ 0.3) type ferromagnet with delocalized spin density.