Metal-insulator transition in a HgTe quantum well under hydrostatic pressure

The 2D semimetal in a 20 nm (100) HgTe quantum well is characterized by a comparatively low overlap between the conduction and the valence bands induced by lattice mismatch. In the present paper we report the results of transport measurements in this quantum well under hydrostatic pressure of 14.4 k...

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Bibliographic Details
Published in:JETP letters 2014-02, Vol.98 (12), p.843-847
Main Authors: Olshanetsky, E. B., Kvon, Z. D., Gerasimenko, Ya. A., Prudkoglyad, V. A., Pudalov, V. M., Mikhailov, N. N., Dvoretsky, S. A.
Format: Article
Language:English
Subjects:
Atomic
Biological and Medical Physics
Biophysics
Molecular
Optical and Plasma Physics
Particle and Nuclear Physics
Physics
Physics and Astronomy
Quantum Information Technology
Solid State Physics
Spintronics
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Summary:The 2D semimetal in a 20 nm (100) HgTe quantum well is characterized by a comparatively low overlap between the conduction and the valence bands induced by lattice mismatch. In the present paper we report the results of transport measurements in this quantum well under hydrostatic pressure of 14.4 kbar. By applying pressure we have further reduced the band overlap, thereby creating favorable conditions for the formation of the excitonic insulator state. As a result, we observed that the metallic-like temperature dependence of the conductivity at lowering temperature sharply changes to the activated behavior, signaling the onset of an excitonic insulator regime.
ISSN:0021-3640
1090-6487
DOI:10.1134/S0021364013250176