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Adsorption of gases on binary and multicomponent semiconductors of the ZnSe-CdTe system
Adsorption of carbon monoxide(II) and oxygen on powders and nanofilms of solid solutions and binary compounds of the ZnSe-CdTe system was studied volumetrically, and by piezoquartz microweighing and IR spectroscopy of multiple disturbed complete internal reflections. The mechanisms and principles of...
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Published in: | Russian Journal of Physical Chemistry A 2011-11, Vol.85 (11), p.1971-1976 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that cite this one |
Online Access: | Get full text |
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Summary: | Adsorption of carbon monoxide(II) and oxygen on powders and nanofilms of solid solutions and binary compounds of the ZnSe-CdTe system was studied volumetrically, and by piezoquartz microweighing and IR spectroscopy of multiple disturbed complete internal reflections. The mechanisms and principles of adsorption were established in dependence on the conditions of the habitus of an experimental sample and the composition of the system’s semiconductors, based on an analysis of IR spectra; the thermodynamic and kinetic characteristics of adsorption; experimental dependences α
p = f
(
T
), α
T = f
(
P
), and α
T = f
(
t
); and the acid-base and other physicochemical characteristics of adsorbents and the electron nature of adsorbate molecules. Conclusions drawn earlier as to the retention of local active centers on the surface of a diamond-like semiconductor (which are responsible for adsorption and catalytic processes) upon a change in the habitus of a sample were confirmed. Certain features in the behavior of solid solutions (ZnSe)
x
(CdTe)
1 −
x
were revealed alongside commonalities with binary compounds (ZnSe, CdTe), testifying to the presence of critical points on “adsorption characteristics-composition” diagrams. The most active adsorbents (with respect to CO and O
2
) were discovered on the basis of these diagrams, which were used in creating highly sensitive and selective sensors. |
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ISSN: | 0036-0244 1531-863X |
DOI: | 10.1134/S0036024411110161 |