Calculating the energy of vacancies and adatoms in a hexagonal SiC monolayer

It is noted that the development of semiconductor SiC-electronics is prevented by a low quality of grown silicon carbide single crystals. It is found that structural defects of a substrate penetrating into an epitaxial layer upon subsequent homoepitaxial growth can considerably degrade a device’s ch...

Full description

Saved in:
Bibliographic Details
Published in:Russian Journal of Physical Chemistry A 2012-07, Vol.86 (7), p.1091-1095
Main Authors: Kuzubov, A. A., Eliseeva, N. S., Krasnov, P. O., Tomilin, F. N., Fedorov, A. S., Tolstaya, A. V.
Format: Article
Language:English
Subjects:
Chemistry
Chemistry and Materials Science
Physical Chemistry
Structure of Matter and Quantum Chemistry
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:It is noted that the development of semiconductor SiC-electronics is prevented by a low quality of grown silicon carbide single crystals. It is found that structural defects of a substrate penetrating into an epitaxial layer upon subsequent homoepitaxial growth can considerably degrade a device’s characteristics. We investigate the effect of the deformation of a hexagonal SiC monolayer on vacancy stability and material properties, and study the processes of silicon and carbon adatom migration over a surface of SiC.
ISSN:0036-0244
1531-863X
DOI:10.1134/S0036024412070138