Atomic layer deposition of zinc sulfide nanolayers on monocrystalline silicon substrates

The formation of zinc sulfide thin films via the atomic laminating of components from a gas phase on single-crystal silicon substrates with (100), (110), and (111) orientations is examined. The characteristic temperatures of changes in the mechanism of layer formation and structural perfection are d...

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Bibliographic Details
Published in:Russian Journal of Physical Chemistry A 2016-03, Vol.90 (3), p.647-651
Main Authors: Ezhovskii, Yu. K., Zakharova, N. V.
Format: Article
Language:English
Subjects:
Chemistry
Chemistry and Materials Science
Physical Chemistry
Physical Chemistry of Surface Phenomena
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Summary:The formation of zinc sulfide thin films via the atomic laminating of components from a gas phase on single-crystal silicon substrates with (100), (110), and (111) orientations is examined. The characteristic temperatures of changes in the mechanism of layer formation and structural perfection are determined. The conditions for using the mechanism of layer growth are determined.
ISSN:0036-0244
1531-863X
DOI:10.1134/S0036024416030092