Comparative analysis of long-range effect using RBS technique and microhardness measurements

The concentration of point defects in silicon samples bombarded by Ar ions with an energy of 30 keV with a dose of 10 16 cm −2 is investigated using Rutherford backscattering combined with ion channeling. It is revealed that there is a variation of point defect concentration on the side of a sample...

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Bibliographic Details
Published in:Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2010-04, Vol.4 (2), p.350-352
Main Authors: Levshunova, V. L., Pokhil, G. P., Tetel’baum, D. l., Chernykh, P. N.
Format: Article
Language:English
Subjects:
Chemistry and Materials Science
Materials Science
Surfaces and Interfaces
Thin Films
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Summary:The concentration of point defects in silicon samples bombarded by Ar ions with an energy of 30 keV with a dose of 10 16 cm −2 is investigated using Rutherford backscattering combined with ion channeling. It is revealed that there is a variation of point defect concentration on the side of a sample opposite to the bombarded one. At the same time, an increase in the microhardness is observed there. These results are evidence in favor of the long-range effect under ion bombardment.
ISSN:1027-4510
1819-7094
DOI:10.1134/S102745101002031X