Formation of GaAsN/GaN cluster nanostructures on the surface of GaAs by the implantation of low-energy nitrogen ions

A nitride nanolayer fabricated on a GaAs (100) surface by implanting ions N 2 + ( E i = 1.5 keV) has been studied by high-resolution photoelectron spectroscopy with the use of synchrotron radiation. It has been found that, apart from the dominant GaN wide-gap semiconductor phase, an additional phase...

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Bibliographic Details
Published in:Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2012-11, Vol.6 (6), p.971-974
Main Authors: Mikoushkin, V. M., Bryzgalov, V. V., Nikonov, S. Yu, Solonitsyna, A. P., Brzhezinskaya, M. M.
Format: Article
Language:English
Subjects:
Chemistry and Materials Science
Materials Science
Surfaces and Interfaces
Thin Films
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Summary:A nitride nanolayer fabricated on a GaAs (100) surface by implanting ions N 2 + ( E i = 1.5 keV) has been studied by high-resolution photoelectron spectroscopy with the use of synchrotron radiation. It has been found that, apart from the dominant GaN wide-gap semiconductor phase, an additional phase of the GaAs 1 − x N x narrow-gap solid solution ( x < 0.10) is present in the nitride layer. It has been shown that the nitride layer created by ion implantation is a nanostructure with an attribute of a system of quantum dots, since it consists of nanoclusters of the narrow-gap semiconductor in the wide-gap matrix.
ISSN:1027-4510
1819-7094
DOI:10.1134/S1027451012080137