Combined multiparametric X-ray diffraction diagnostics of microdefects in silicon crystals after irradiation by high-energy electrons

The quantitative diagnostics of complex defect structures in silicon crystals grown by the Czochralski method and irradiated with different doses of high-energy electrons (18 MeV) is performed by methods of high-resolution X-ray diffraction. The analysis is based on analytical formulas of the statis...

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Bibliographic Details
Published in:Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2013-05, Vol.7 (3), p.523-530
Main Authors: Kislovskii, E. N., Molodkin, V. B., Olikhovskii, S. I., Len, E. G., Sheludchenko, B. V., Lizunova, S. V., Vladimirova, T. P., Kochelab, E. V., Reshetnyk, O. V., Dovganyuk, V. V., Fodchuk, I. M., Lytvynchuk, T. V., Klad’ko, V. P.
Format: Article
Language:English
Subjects:
Chemistry and Materials Science
Materials Science
Surfaces and Interfaces
Thin Films
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Summary:The quantitative diagnostics of complex defect structures in silicon crystals grown by the Czochralski method and irradiated with different doses of high-energy electrons (18 MeV) is performed by methods of high-resolution X-ray diffraction. The analysis is based on analytical formulas of the statistical dynamical theory of X-ray diffraction in nonideal crystals with randomly distributed defects of several types. Using the combined treatment of reciprocal space maps and rocking curves, the concentration and average radii of dislocation loops, as well as the concentration and radii of oxygen precipitates in the silicon samples, are determined.
ISSN:1027-4510
1819-7094
DOI:10.1134/S1027451013030270