Role of an oxide layer in the long-range effect upon irradiation of silicon by light and ions with medium energy

Correlations between the modes of silicon irradiation with light, as well as the thickness of an oxide layer on the surface of the sample, and the character of changes in the microhardness in the long-range effect are experimentally established. The results are interpreted from the standpoint of the...

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Bibliographic Details
Published in:Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2013-07, Vol.7 (4), p.631-636
Main Authors: Tetelbaum, D. I., Kuril’chik, E. V., Mendeleva, Yu. A., Pyatkina, A. A.
Format: Article
Language:English
Subjects:
Chemistry and Materials Science
Materials Science
Surfaces and Interfaces
Thin Films
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Summary:Correlations between the modes of silicon irradiation with light, as well as the thickness of an oxide layer on the surface of the sample, and the character of changes in the microhardness in the long-range effect are experimentally established. The results are interpreted from the standpoint of the effect of processes that take place in the oxide layer upon irradiation and cause the generation of two types of hypersonic waves that determine the regularities of the effect. It is shown that an oxide layer on the irradiated silicon surface is a mandatory condition for manifestation of the long-range effect not only in the case of irradiation with light, but also upon ion irradiation.
ISSN:1027-4510
1819-7094
DOI:10.1134/S1027451013040198