On Selection of the initial approximation in the method of confluence analysis for cathodoluminescence identification of the parameters of direct-gap semiconductors for the quadratic recombination of minority charge carriers

The problem of selection of the initial approximation for the task of identifying the electrical parameters of direct-gap semiconductors by the method of confluence analysis using the dependence of the intensity of the monochromatic cathodoluminescence caused by the quadratic recombination of minori...

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Bibliographic Details
Published in:Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2013-11, Vol.7 (6), p.1072-1076
Main Authors: Nikiforova, N. A., Polyakov, A. N., Mikheev, N. N., Stepovich, M. A.
Format: Article
Language:English
Subjects:
Chemistry and Materials Science
Materials Science
Surfaces and Interfaces
Thin Films
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Summary:The problem of selection of the initial approximation for the task of identifying the electrical parameters of direct-gap semiconductors by the method of confluence analysis using the dependence of the intensity of the monochromatic cathodoluminescence caused by the quadratic recombination of minority charge carriers on the electron-beam energy is considered.
ISSN:1027-4510
1819-7094
DOI:10.1134/S102745101306013X