Studying stacking faults in SiC by the XBIC method using a laboratory X-ray source

Using the X-ray-beam-induced current (XBIC) method, stacking faults in hexagonal silicon carbide 4H-SiC are studied. It is shown that the XBIC method using a laboratory source makes it possible to reveal extended defects in samples with a submicron diffusion length and anomalous bright contrast. The...

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Bibliographic Details
Published in:Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2014, Vol.8 (1), p.155-157
Main Authors: Grigoriev, M. V., Roshchupkin, D. V., Fakhrtdinov, R. R., Yakimov, E. B.
Format: Article
Language:English
Subjects:
Chemistry and Materials Science
Materials Science
Surfaces and Interfaces
Thin Films
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Summary:Using the X-ray-beam-induced current (XBIC) method, stacking faults in hexagonal silicon carbide 4H-SiC are studied. It is shown that the XBIC method using a laboratory source makes it possible to reveal extended defects in samples with a submicron diffusion length and anomalous bright contrast. The fault contrast is measured and compared with the contrast obtained in the electron-beam-induced current (EBIC) method. Discussion of the obtained results is presented.
ISSN:1027-4510
1819-7094
DOI:10.1134/S1027451014010340