Measurement of the diffusion length and the lifetime of free excitons in gallium nitride using cathodoluminescence under different conditions of luminescence excitation

Using single-crystal n -GaN as an example, some possibilities of a procedure for quantitative cathodoluminescence of the direct-gap material are considered. This procedure is based on using the dependence of the cathodoluminescence intensity on the beam-electron energy at a constant level of electro...

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Bibliographic Details
Published in:Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2015-07, Vol.9 (4), p.839-843
Main Authors: Nikiforova, N. A., Stepovich, M. A., Mikheev, N. N., Hocker, M., Tischer, I.
Format: Article
Language:English
Subjects:
Chemistry and Materials Science
Materials Science
Surfaces and Interfaces
Thin Films
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Summary:Using single-crystal n -GaN as an example, some possibilities of a procedure for quantitative cathodoluminescence of the direct-gap material are considered. This procedure is based on using the dependence of the cathodoluminescence intensity on the beam-electron energy at a constant level of electron-hole pair generation. Estimates of the diffusion length and the lifetime of free excitons and of the spectral dependence of the coefficient of recombination-radiation self-absorption are obtained using this procedure.
ISSN:1027-4510
1819-7094
DOI:10.1134/S102745101504031X