Kinetics of the formation of oxide nanostructures on n-Si in the potentiostatic mode of water anodization

The results of studies of the morphological properties of an oxide film obtained by the anodic oxidation of a n -Si(100) single-crystal silicon wafer in distilled water in the potentiostatic mode are presented. Irrespective of the value of the applied potential and the anodic treatment time, the oxi...

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Bibliographic Details
Published in:Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2016-03, Vol.10 (2), p.341-345
Main Authors: Orlov, A. M., Yavtushenko, I. O., Makhmud-Akhunov, M. Yu, Solovyev, A. A.
Format: Article
Language:English
Subjects:
Chemistry and Materials Science
Materials Science
Surfaces and Interfaces
Thin Films
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Summary:The results of studies of the morphological properties of an oxide film obtained by the anodic oxidation of a n -Si(100) single-crystal silicon wafer in distilled water in the potentiostatic mode are presented. Irrespective of the value of the applied potential and the anodic treatment time, the oxide coating is always formed as separate islands, interconnected by a thin layer of barrier oxide, the thickness of which is adjusted by the pH value of an alkaline solution (pH > 7) produced in a limited area of local oxidation.
ISSN:1027-4510
1819-7094
DOI:10.1134/S1027451016020142