Effect of low-energy X-ray radiation on the electrophysical properties of silicon crystals of n- and p-type conductivity

We study the kinetics of the photovoltage decay in silicon crystals, caused by the effect of lowenergy ( E = 8 keV) X-ray radiation. A correlation between radiation-induced changes in the short-term and long-term components of the photovoltage decay and the charge state of the surface, determined by...

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Bibliographic Details
Published in:Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2016-05, Vol.10 (3), p.672-675
Main Authors: Steblenko, L. P., Podolyan, A. A., Nadtochiy, A. B., Kuryliuk, A. N., Kalinichenko, D. V., Kobzar, Yu. L., Krit, A. N., Naumenko, S. N.
Format: Article
Language:English
Subjects:
Chemistry and Materials Science
Materials Science
Surfaces and Interfaces
Thin Films
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Summary:We study the kinetics of the photovoltage decay in silicon crystals, caused by the effect of lowenergy ( E = 8 keV) X-ray radiation. A correlation between radiation-induced changes in the short-term and long-term components of the photovoltage decay and the charge state of the surface, determined by measuring the surface distribution of the amplitude and decay time of the photovoltage, is found.
ISSN:1027-4510
1819-7094
DOI:10.1134/S1027451016020361