Void transformation and dopant distribution in porous silicon

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Bibliographic Details
Published in:Russian microelectronics 2007-02, Vol.36 (1), p.49-52
Main Authors: Kovalevskii, A. A., Dolbik, A. V., Unuchek, D. N., Tarasikov, M. V.
Format: Article
Language:English
Online Access:Get full text
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ISSN:1063-7397
1608-3415
DOI:10.1134/S1063739707010064