Formation of the TiN/CoSi2 system by rapid thermal annealing of a Co/Ti/Si structure

An Auger-spectroscopy investigation is conducted into the formation of the TiN/CoSi 2 system by rapid thermal annealing of a Co/Ti/Si structure in a nitrogen atmosphere. Two different directions of temperature gradient under annealing are considered. It is established that TiN/CoSi 2 formation occur...

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Bibliographic Details
Published in:Russian microelectronics 2008-07, Vol.37 (4), p.215-225
Main Authors: Rudakov, V. I., Gusev, V. N.
Format: Article
Language:English
Subjects:
Electrical Engineering
Engineering
Materials and Microstructure Characterization
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Summary:An Auger-spectroscopy investigation is conducted into the formation of the TiN/CoSi 2 system by rapid thermal annealing of a Co/Ti/Si structure in a nitrogen atmosphere. Two different directions of temperature gradient under annealing are considered. It is established that TiN/CoSi 2 formation occurs only when the temperature on the coated side of the specimen grows with depth. The influence of different factors is discussed.
ISSN:1063-7397
1608-3415
DOI:10.1134/S1063739708040021