Internal-getter formation in nitrogen-doped dislocation-free silicon wafers

An experimental study is reported concerning the formation of defects in nitrogen-doped dislocation-free silicon wafers under a multistage heat treatment to produce an internal getter, the first stage being rapid thermal annealing (RTA) under different conditions. The experiments are conducted on p-...

Full description

Saved in:
Bibliographic Details
Published in:Russian microelectronics 2011-12, Vol.40 (8), p.553-558
Main Authors: Mezhennyi, M. V., Mil’vidskii, M. G., Reznik, V. Ya
Format: Article
Language:English
Subjects:
Electrical Engineering
Engineering
Materials Science and Technology: Semiconductors
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:An experimental study is reported concerning the formation of defects in nitrogen-doped dislocation-free silicon wafers under a multistage heat treatment to produce an internal getter, the first stage being rapid thermal annealing (RTA) under different conditions. The experiments are conducted on p-Si(100) wafers of diameter 200 mm with an oxygen content of (6−7) × 10 17 cm −3 and a doping level of 1.6 × 10 14 cm −3 , the resistivity being 10–12 ω cm. The processed wafers are examined by optical microscopy and transmission electron microscopy. With normal conditions of RTA (argon, 1250°C, 20 s), the process is found to be incapable of creating a defect-free subsurface layer of adequate thickness, though it is able to provide the desired system of defects in the bulk. The aim is achieved by changing to sequential RTA in oxygen and argon as the first stage. The reasons for the results are presented.
ISSN:1063-7397
1608-3415
DOI:10.1134/S1063739711080166