Study of the atomically clean InSe(0001) surface by X-ray photoelectron spectroscopy

The (0001) surface of layered InSe semiconductor crystals is studied experimentally using X-ray photoelectron spectroscopy and theoretically within the context of the method of the electron density functional with periodic boundary conditions. It was found that the structure of the surface layer of...

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Bibliographic Details
Published in:Russian microelectronics 2012-12, Vol.41 (8), p.521-526
Main Authors: Volykhov, A. A., Neudachina, V. S., Kharlamova, M. V., Itkis, D. M., Yashina, L. V., Belogorokhov, A. I.
Format: Article
Language:English
Subjects:
Electrical Engineering
Engineering
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Summary:The (0001) surface of layered InSe semiconductor crystals is studied experimentally using X-ray photoelectron spectroscopy and theoretically within the context of the method of the electron density functional with periodic boundary conditions. It was found that the structure of the surface layer of atoms and their state has much in common with the corresponding structure and state in the volume. The InSe(0001) surface is resistant to long exposure to air, which makes this material promising for applications as a standard for composition analysis when using electron spectroscopy.
ISSN:1063-7397
1608-3415
DOI:10.1134/S1063739712080185