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Resistive switching in TiN/Hf x Al1 − x O y /HfO2/TiN and TiN/HfO2/Ti/TiN structures

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Bibliographic Details
Published in:Russian microelectronics 2014-09, Vol.43 (5), p.328-332
Main Authors: Orlov, O. M., Gornev, E. S., Shadrin, A. V., Zaitsev, S. A., Morozov, S. A., Zablotskii, A. V.
Format: Article
Language:English
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ISSN:1063-7397
1608-3415
DOI:10.1134/S1063739714050059