Growth of Bi12GeO20 and Bi12SiO20 crystals by the low-thermal gradient Czochralski technique

Bi 12 SiO 20 crystals have been grown for the first time by the low-thermal gradient Czochralski technique in the 〈111〉 and 〈110〉 directions. The conditions for reproducible crystal growth with a high-quality polyhedral faceted front are found. The systematic features of shaping Bi 12 SiO 20 and Bi...

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Bibliographic Details
Published in:Crystallography reports 2011-03, Vol.56 (2), p.339-344
Main Authors: Shlegel, V. N., Pantsurkin, D. S.
Format: Article
Language:English
Subjects:
Crystal Growth
Crystallography and Scattering Methods
Physics
Physics and Astronomy
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Summary:Bi 12 SiO 20 crystals have been grown for the first time by the low-thermal gradient Czochralski technique in the 〈111〉 and 〈110〉 directions. The conditions for reproducible crystal growth with a high-quality polyhedral faceted front are found. The systematic features of shaping Bi 12 SiO 20 and Bi 12 GeO 20 crystals, grown by the low-thermal gradient Czochralski technique, are compared. The defect formation in these crystals is studied and their optical homogeneity is analyzed by interferometry.
ISSN:1063-7745
1562-689X
DOI:10.1134/S1063774511010226