Effect of doping method on the formation of charge-compensating defects in PbMoO4:Nd3+ crystals

PbMoO 4 :Nd 3+ single crystals have been grown using different doping schemes. Their dielectric properties have been studied in the temperature range of 20–550°C at frequencies from 25 to 10 6 Hz. The activation energies of dielectric relaxation are determined for all samples, and the Nd 3+ luminesc...

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Bibliographic Details
Published in:Crystallography reports 2012-12, Vol.57 (7), p.962-966
Main Authors: Gorobets, Yu. N., Kosmyna, M. B., Luchechko, A. P., Nazarenko, B. P., Puzikov, V. M., Sugak, D. Yu, Shekhovtsov, A. N.
Format: Article
Language:English
Subjects:
Crystal Growth
Crystallography and Scattering Methods
Physics
Physics and Astronomy
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Summary:PbMoO 4 :Nd 3+ single crystals have been grown using different doping schemes. Their dielectric properties have been studied in the temperature range of 20–550°C at frequencies from 25 to 10 6 Hz. The activation energies of dielectric relaxation are determined for all samples, and the Nd 3+ luminescence decay kinetics is studied. The most realistic models of activator centers in PbMoO 4 :Nd 3+ crystals are proposed based on the optical and dielectric spectroscopy data.
ISSN:1063-7745
1562-689X
DOI:10.1134/S1063774512070073