Influence of rare earth elements (Nd, Sm, Gd) on the physicochemical properties of ges crystal

Layered semiconductors (including GeS), which are widely used in modern electronics, are of great interest for researchers. New GeS-based devices have been developed for holographic recording, optical processing, and storage of information. In the last few years, American scientists have developed a...

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Bibliographic Details
Published in:Crystallography reports 2015-11, Vol.60 (6), p.921-923
Main Authors: Madatov, R. S., Alekperov, A. S., Magerramova, Dzh. A.
Format: Article
Language:English
Subjects:
Crystallography and Scattering Methods
Physical Properties of Crystals
Physics
Physics and Astronomy
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Summary:Layered semiconductors (including GeS), which are widely used in modern electronics, are of great interest for researchers. New GeS-based devices have been developed for holographic recording, optical processing, and storage of information. In the last few years, American scientists have developed a unique GeS-based device that makes it possible to accumulate an immense amount of solar energy. The introduction of rare earth elements (REEs) facilitates the healing of metal and chalcogenide vacancies, removes polytypism, and enhances interlayer interaction.
ISSN:1063-7745
1562-689X
DOI:10.1134/S1063774515060188