Special features of the photoluminescence of self-assembled Ge(Si)/Si(001) islands grown on a strained Si1−x Gex layer

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2006-03, Vol.40 (3), p.338-341
Main Authors: Drozdov, Yu. N., Krasil’nik, Z. F., Lobanov, D. N., Novikov, A. V., Shaleev, M. V., Yablonskiĭ, A. N.
Format: Article
Language:English
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ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782606030158