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High-power laser diodes (λ = 808–850 nm) based on asymmetric separate-confinement heterostructures

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Bibliographic Details
Published in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2006-05, Vol.40 (5), p.611-614
Main Authors:	Andreev, A. Yu, Leshko, A. Yu, Lyutetskiĭ, A. V., Marmalyuk, A. A., Nalyot, T. A., Padalitsa, A. A., Pikhtin, N. A., Sabitov, D. R., Simakov, V. A., Slipchenko, S. O., Khomylev, M. A., Tarasov, I. S.
Format:	Article
Language:	English
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