High-power laser diodes (λ = 808–850 nm) based on asymmetric separate-confinement heterostructures

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Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2006-05, Vol.40 (5), p.611-614
Main Authors: Andreev, A. Yu, Leshko, A. Yu, Lyutetskiĭ, A. V., Marmalyuk, A. A., Nalyot, T. A., Padalitsa, A. A., Pikhtin, N. A., Sabitov, D. R., Simakov, V. A., Slipchenko, S. O., Khomylev, M. A., Tarasov, I. S.
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container_title Semiconductors (Woodbury, N.Y.)
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creator Andreev, A. Yu
Leshko, A. Yu
Lyutetskiĭ, A. V.
Marmalyuk, A. A.
Nalyot, T. A.
Padalitsa, A. A.
Pikhtin, N. A.
Sabitov, D. R.
Simakov, V. A.
Slipchenko, S. O.
Khomylev, M. A.
Tarasov, I. S.
description
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title High-power laser diodes (λ = 808–850 nm) based on asymmetric separate-confinement heterostructures
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