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Nonmonotonic variations in the concentration of the donor-and acceptor-type radiation defects in silicon irradiated with low-intensity fluxes of β particles

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2006-12, Vol.40 (12), p.1375-1377
Main Authors: Badylevich, M. V., Blokhin, I. V., Golovin, Yu. I., Dmitrievskiĭ, A. A., Kartsev, S. V., Suchkova, N. Yu, Tolotaev, M. Yu
Format: Article
Language:English
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ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782606120013