Reconstruction of the potential profile in an insulating layer using current-voltage characteristics of tunneling MIS diodes

A method for reconstruction of the potential profile in an insulating layer is developed on the basis of the field dependence of the tunneling current through the layer. The coordinates of the turning points as functions of the voltage applied to the insulating layer are determined in quasi-classica...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2008, Vol.42 (1), p.92-98
Main Authors: Goldman, E. I., Zhdan, A. G., Kukharskaya, N. F., Chernyaev, M. V.
Format: Article
Language:English
Subjects:
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Physics of Semiconductor Devices
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Summary:A method for reconstruction of the potential profile in an insulating layer is developed on the basis of the field dependence of the tunneling current through the layer. The coordinates of the turning points as functions of the voltage applied to the insulating layer are determined in quasi-classical approximation from the tunneling current-voltage characteristics. The potential is constructed using these functions. The developed algorithm was applied to an n + -Si-SiO 2 - n -Si structure with oxide thickness of 37 Å. Typically, for a real potential profile, there exist relatively thick layers (of ∼10 Å) with lowered potential that separate SiO 2 from the actual tunneling barrier.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782608010132